1 features ? ezbright power chip led rf performance C 90 mw min. @ 150 ma C 450 & 460 nm C 75 mw min. @ 150 ma - 470 nm C 25 mw min. @ 150 ma - 527 nm ? lambertian radiation ? conductive epoxy, solder paste or preforms, or flux eutectic attach ? low forward voltage C 3.5 v typical at 150 ma ? single wire bond structure ? maximum dc forward current - 200 ma dielectric passivation across epi surface applications ? general illumination C automobile C aircraft C decorative lighting C task lighting C outdoor illumination ? white leds ? crosswalk signals ? television backlighting cree ? ez400-n? gen 2 led data sheet (cathode-up) c xxx ez400-s xx x00-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez400-sxxx00 chip diagram top view bottom view ezbright led chip 380 x 380 m 2 t = 170 m backside metallization gold bond pad 112 m die cross section anode (+); 3 m ausn cathode (-) d a t a s h e e t : c p r 3 e d r e v . - dielectric passivation subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c note 1 c xxx ez400-s xx x00-2 dc forward current 200 ma peak forward current 350 ma note 3 led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +120c typical electrical/optical characteristics at t a = 25c, if = 150 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez400-s xx x00-2 3.1 3.5 4.1 2 20 c460ez400-s xx x00-2 3.1 3.5 4.1 2 21 c470ez400-s xx x00-2 3.1 3.5 4.1 2 24 c527ez400-s xx x00-2 3.2 3.7 4.2 2 35 mechanical specifcations c xxx ez400-s xx x00-2 description dimension tolerance p-n junction area (m) 350 x 350 40 chip area (m) 380 x 380 40 chip thickness (m) 170 25 top au bond pad diameter (m) 112 15 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 380 x 380 40 back contact metal thickness (m) 3.0 1.0 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 150 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. 3. this peak forward current specifcation is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65c. copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400-n are trademarks of cree, inc. cpr3ed rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
3 standard bins for c xxx ez400-s xx x00-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez400-s xx x00-2) orders may be flled with any or all bins (c xxx ez400-0 xxx-2 ) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 150 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez400-s09000-2 c450ez400-0213-2 c450ez400-0214-2 c450ez400-0215-2 c450ez400-0216-2 c450ez400-0209-2 c450ez400-0210-2 c450ez400-0211-2 c450ez400-0212-2 c450ez400-0205-2 c450ez400-0206-2 c450ez400-0207-2 c450ez400-0208-2 120 mw 105 mw 90 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c460ez400-s09000-2 c460ez400-0213-2 c460ez400-0214-2 c460ez400-0215-2 c460ez400-0216-2 c460ez400-0209-2 c460ez400-0210-2 c460ez400-0211-2 c460ez400-0212-2 c460ez400-0205-2 c460ez400-0206-2 c460ez400-0207-2 c460ez400-0208-2 120 mw 105 mw 90 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c470ez400-s07500-2 c470ez400-0209-2 c470ez400-0210-2 c470ez400-0211-2 c470ez400-0212-2 c470ez400-0205-2 c470ez400-0206-2 c470ez400-0207-2 c470ez400-0208-2 c470ez400-0201-2 c470ez400-0202-2 c470ez400-0203-2 c470ez400-0204-2 105 mw 90 mw 75 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c527ez400-s2500-2 c527ez400-0207-2 c527ez400-0208-2 c527ez400-0209-2 c527ez400-0204-2 c527ez400-0205-2 c527ez400-0206-2 c527ez400-0201-2 c527ez400-0202-2 c527ez400-0203-2 50 mw 40 mw 25 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400-n are trademarks of cree, inc. cpr3ed rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
4 characteristic curves these are representative measurements for the ezbright400. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400-n are trademarks of cree, inc. cpr3ed rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
5 radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip. copyright ? 2009 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez400-n are trademarks of cree, inc. cpr3ed rev. - cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5870 www.cree.com/chips
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